Methods and apparatus for a memory device with self-healing...

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital data error correction

Reexamination Certificate

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C714S025000, C714S777000

Reexamination Certificate

active

07747926

ABSTRACT:
A memory device, such an MRAM device, includes self-healing reference bits (104) associated with a set of array bits (102). The memory performs an error detection step (e.g., using an error-correction coding (ECC) algorithm, to detect the presence of a set of errors within the data bits. One of the reference bits (104) is toggled to a different state if an error count is greater than a predetermined threshold. If the set of errors remains unchanged when subsequently read, the reference bit (104) is toggled back to its original state.

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Durlam, M., Naji, P., Omair, A., Deherrera, J., Calder, J et al. A Low Power 1 Mbit MRAM Based on 1T1MTJ Bit Cell Integrated With Copper Interconnects, 2002 Symposium on VLSI Circuits Digest of Technical Papers, pp. 158-161.

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