Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-08-21
2007-08-21
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S370020, C250S370070, C250S397000, C257S429000, C257S430000, C438S056000, C438S057000
Reexamination Certificate
active
11006305
ABSTRACT:
The Grunn equation:Depth=0.046(Vacc)nρis modified to accurately predict depth of electron beam penetration into a target material. A two-layer stack is formed comprising a thickness of the target material overlying a detection material exhibiting greater sensitivity to the electron beam than the target material. The target material is exposed to electron beam radiation of different energies, with the threshold energy resulting in a changed physical property of the detection material below a predetermined value marking a penetration depth corresponding to the target material thickness. Utilizing the threshold energy (Vacc), the target material thickness (Depth), and the known target material density (ρ), the numerical power “n” of the Grunn equation is calculated to fit experimental results. So modified, the Grunn equation accurately predicts the depth of penetration of electron beams of varying energies into the target material.
REFERENCES:
patent: 4905170 (1990-02-01), Forouhi et al.
patent: 5362526 (1994-11-01), Wang
patent: 6080526 (2000-06-01), Yang et al.
patent: 6541367 (2003-04-01), Mandal
patent: 6603120 (2003-08-01), Yamashita
patent: WO99/41423 (1999-08-01), None
MTS, Fast, Economical—New Nano Indenter XPW, MTS Systems Corporation, 2001, Eden Prairie, MN, pp. 1-2.
N&K, N&K Trench Measurement Method Gains Industry Acceptance Multiple 3000TMS in Use Worldwide, www.nandk.com/pressevents/pressreleases/Apr. 21, 2003.html, printed Mar. 23, 2004.
Demos et al., “Thermally Stable, k<2.5 Carbon-Doped Oxide Film Deposited by a Plasma-Enhance CVD Process,” [abstract], Applied Materials, Santa Clara, CA, USA, May 11, 2004, 1 page total.
Demos et al., “A Thermally Stable, k<2.5 Carbon-Doped Oxide Film Deposited by a Plasma-Enhance CVD Process,” Microsoft Power Point presentation, Applied Materials, Santa Clara, CA, USA, May 11, 2004, 21 pages total.
Dixit et al., “Film Properties and Integration Performance of a Nano-Porous Carbon Doped Oxide,” Applied Materials, Santa Clara, CA, USA, May 11, 2004, 3 pages total.
Dixit et al., “Film Properties and Integration Performance of a Nano-Porous Carbon Doped Oxide,” Microsoft Power Point presentation, Applied Materials, Santa Clara, CA, USA, May 11, 2004, 22 pages total.
Demos Alexandros T.
Liu Josephine J.
M'Saad Hichem
Applied Materials Inc.
Berman Jack I.
Hashmi Zia R.
Townsend and Townsend and Crew
LandOfFree
Methodology for determining electron beam penetration depth does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methodology for determining electron beam penetration depth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methodology for determining electron beam penetration depth will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3895519