Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2007-04-03
2007-04-03
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
C438S016000, C438S017000, C257SE21525
Reexamination Certificate
active
10638027
ABSTRACT:
Disclosed are techniques for efficiently inspecting defects on voltage contrast test. In one embodiment, methodologies and test structures allow inspection to occur entirely within a charged particle system. In a specific embodiment, a method of localizing and imaging defects in a semiconductor test structure suitable for voltage contrast inspection is disclosed. A charged particle beam based tool is used to determine whether there are any defects present within a voltage contrast test structure. The same charged particle beam based tool is then used to locate defects determined to be present within the voltage contrast test structure. Far each localized defect, the same charged particle beam based tool may then be used to generate a high resolution image of the localized defect whereby the high resolution image can later be used to classify the each defect. In one embodiment, the defect's presence and location are determined without rotating the test structure relative to the charged particle beam.
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KLA-Tencor, “Automated e-beam inspection”, www.kla-tencor.com, printed Nov. 8, 2002. Copyright 2002.
KLA-Tencor, “E-beam defect review”, www.kla-tencor.com, printed Nov. 8, 2002. Copyright 2002.
Weiner, et al., “Apparatus and Methods for Semiconductor IC Failure Detection”, U.S. Appl. No. 10/264,625, filed Oct. 2, 2002.
Verma Gaurav
Weiner Kurt H.
Beyer & Weaver, LLP
KLA-Tencor Technologies Corporation
Trinh Michael
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