Method to write/read MRAM arrays

Details Method to write/read MRAM arrays Method to write/read MRAM arrays

1998-07-27

2000-06-27

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365158, 365173, G11C 1100

Patent

active

060814454

ABSTRACT:
A method of writing/reading an array of magnetoresistive cells, with each cell in the array having associated therewith a first current line that generates an easy axis field and a second orthogonal current line that generates a hard axis field when current is applied thereto. The method includes initially applying a current to the second orthogonal current lines in a first direction that generates a hard axis field to switch end domains in all cells in the array to a fixed direction, and selecting a cell in the array for write/read using a half-select technique including supplying a half-select current to the first current line associated with the selected cell to generate a half-select easy axis field and, simultaneously, supplying a half-select current in the first direction to the second current line associated with the selected cell to generate a half-select hard axis field.

REFERENCES:
patent: 4356523 (1982-10-01), Yeh
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5343422 (1994-08-01), Kung et al.

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