Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-13
2005-12-13
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S298000, C257S410000, C438S003000, C438S239000, C438S240000, C204S192170
Reexamination Certificate
active
06974984
ABSTRACT:
Methods of depositing various metal layers adjacent to a ferroelectric polymer layer are disclosed. In one embodiment, a collimator may be used during a sputtering process to filter out charged particles from the material that may be deposited as a metal layer. In various embodiments, a metal layer may contain at least one of an intermetallic layer, an amorphous intermetallic layer, and an amorphized intermetallic layer.
REFERENCES:
patent: 6582569 (2003-06-01), Chiang et al.
patent: 6812509 (2004-11-01), Xu
patent: 6878980 (2005-04-01), Gudesen et al.
patent: 2004/0209420 (2004-10-01), Ljungcrantz et al.
Andideh Ebrahim
Diana Daniel C.
Hicks William C.
Richards Mark
Windlass Hitesh
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nelms David
Tran Mai-Huong
LandOfFree
Method to sputter deposit metal on a ferroelectric polymer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to sputter deposit metal on a ferroelectric polymer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to sputter deposit metal on a ferroelectric polymer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3470827