Method to sputter deposit metal on a ferroelectric polymer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S040000, C257S298000, C257S410000, C438S003000, C438S239000, C438S240000, C204S192170

Reexamination Certificate

active

06974984

ABSTRACT:
Methods of depositing various metal layers adjacent to a ferroelectric polymer layer are disclosed. In one embodiment, a collimator may be used during a sputtering process to filter out charged particles from the material that may be deposited as a metal layer. In various embodiments, a metal layer may contain at least one of an intermetallic layer, an amorphous intermetallic layer, and an amorphized intermetallic layer.

REFERENCES:
patent: 6582569 (2003-06-01), Chiang et al.
patent: 6812509 (2004-11-01), Xu
patent: 6878980 (2005-04-01), Gudesen et al.
patent: 2004/0209420 (2004-10-01), Ljungcrantz et al.

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