Method to selectively cap interconnects with indium or tin...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257S773000, C257S774000, C257S775000, C257SE23106, C257SE23161, C257SE23163

Reexamination Certificate

active

07115996

ABSTRACT:
A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.

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D. Edelstein et al., “Full Copper Wiring in a Sub-0.25 μm CMOS ULSI Technology”, IBM Semiconductor Research and Development Center.

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