Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Menz, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S635000, C257S338000
Reexamination Certificate
active
07999325
ABSTRACT:
An example process to remove spacers from the gate of a NMOS transistor. A stress creating layer is formed over the NMOS and PMOS transistors and the substrate. In an embodiment, the spacers on gate are removed so that stress layer is closer to the channel of the device. The stress creating layer is preferably a tensile nitride layer. The stress creating layer is preferably a contact etch stop liner layer. In an embodiment, the gates, source and drain region have a silicide layer thereover before the stress creating layer is formed. The embodiment improves the performance of the NMOS transistors.
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Hsia Liang Choo
Koh Hui Peng
Lai Chung Woh
Lee Yong Meng
Lim Khee Yong
Globalfoundries Singapore Pte. Ltd.
Horizon IP Pte. Ltd.
Menz Laura M
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