Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-01-14
1995-01-10
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156651, 156652, 156643, 156646, 134 1, 20419235, H01L 2100
Patent
active
053804015
ABSTRACT:
The process of the present invention comprises the addition of an adequate amount of argon gas in a dry etch system to clear bond pads of residual contaminants which form an undesired oxide coating on the bond pads. Carbon dioxide may be used as a carrier gas along with the argon gas. The process of the present invention preferably takes place in situ, following the silicon nitride pad etch in which fluorine-containing chemicals are used to form the bond pads.
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J. F. Graves, W. Gurany, "Reliability Effects of Fluorine Contamination of Aluminum Bonding Pads on Semiconductor Chips", Solid State Technology, Oct. 1983, pp. 227-232.
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R. Jay Ritchie, D. Marshall Andrews, "CF.sub.4 /O.sub.2 Plasma Accelerated Aluminum Metallization Corrosion in Plastic Encapsulated ICs in the Presence of Contaminated Die Attach Epoxies", 1981, pp. 88-92.
T. J. Chuang, H. F. Winters, J. W. Coburn, "An XPS and Auger Investigation of CF.sub.3 +Ion Bombardment of Silicon", North-Holland Publishing Company, 1978, pp. 515-531.
T. Valand, G. Nilsson, "The Influence of F-Ions on the Electrochemical Reactions on Oxide-Covered Al", Corrosion Science, 1977, vol. 17, pp. 449-459.
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Crane William J.
Gilchrist Robin L.
Jones Curtis S.
Langley Rod C.
Breneman R. Bruce
Goudreau George
Micro)n Technology, Inc.
Pappas Lia M.
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