Method to reduce UBM undercut

Details Method to reduce UBM undercut Method to reduce UBM undercut

2006-12-29

2008-11-25

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21508

Reexamination Certificate

active

07456090

ABSTRACT:
A method of manufacturing a solder bump structure on a semiconductor device is provided. In one embodiment, a semiconductor substrate is provided having a bonding pad and a passivation layer formed thereabove, the passivation layer having an opening therein exposing a portion of the bonding pad. A first under bump metallization (UBM) layer is formed over the bonding pad and the passivation layer. A mask layer is placed over the first UBM layer, the mask layer having an opening therein exposing a portion of the first UBM layer. The mask layer is thereafter etched to create a recess at the edges between the first UBM layer and the mask layer. A second UBM layer is deposited in the opening of the mask layer, the second UBM layer filling the recess and a portion of the opening of the mask layer.

REFERENCES:
patent: 6372545 (2002-04-01), Fan et al.
patent: 6967153 (2005-11-01), Tong et al.
patent: 7015130 (2006-03-01), Tsai et al.
patent: 2004/0259345 (2004-12-01), Yu et al.
patent: 2007/0117368 (2007-05-01), Tsai et al.

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