Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-11
2007-09-11
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S675000, C438S699000
Reexamination Certificate
active
10439975
ABSTRACT:
Embodiments of the present invention provide methods to reduce the copper line roughness for increased electrical conductivity in narrow interconnects having a width of less than 100 nm. These methods reduce the copper line roughness by first smoothing the surface on which the copper lines are formed by performing a short electrochemical etch of the surface. The electrical conductivity of the interconnects is increased by reducing the copper line roughness that in turn reduces the resistivity of the copper lines.
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Feynman, Richard P., et al., The Feynman Lectures On Physics, Mainly Electromagetism And Matter, vol. II, © 1964, California Institute Of Technology, Sixth printing, Feb. 1977, pp. 6-13 and 6-14, Addison-Wesley Publishing Company, Reading, Massachusetts, Menlo Park, California, London, Amsterdam, Don Mills, Ontario, Sydney.
Steinhögl, W., et al., Surface and Grain Boundary Scattering: A Modelling Study on Effects Dominating the Electrical Resistivity in sub-50nm Copper Lines, Advanced Metallization Conference (AMC) 2002, San Diego, Oct. 2002, 2 pages.
Gracias David H.
Wu Chih-I
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Smoot Stephen W.
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