Method to reduce switch threshold of soft magnetic films

Details Method to reduce switch threshold of soft magnetic films Method to reduce switch threshold of soft magnetic films

2005-05-10

2005-05-10

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S396000

Reexamination Certificate

active

06890767

ABSTRACT:
In magnetic memories it is important to be able to switch the states of the memory elements using minimal power i.e. external fields of minimal intensity. This has been achieved by giving each memory element an easy axis whose direction parallels its minimum surface dimension. Then, when the magnetic state of the element is switched by rotating its direction of magnetization, said rotation is assisted, rather than being opposed, by the crystalline anisotropy. Consequently, relative to the prior art, a lower external field is required to switch the state of the element.

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