Method to reduce silanol and improve barrier properties in...

Details Method to reduce silanol and improve barrier properties in... Method to reduce silanol and improve barrier properties in...

2006-05-02

2006-05-02

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000

Reexamination Certificate

active

07037823

ABSTRACT:
A trench and via structure is formed in a low k dielectric layer (100) formed over a silicon substrate (10). Super critical CO2and a first silylization agent are used to form a chemically bonded high density surface layer (160). Silanol species are removed from the low k dielectric layer (100) using super critical CO2and a second silylization agent. A barrier layer (190) and copper (200) are used to fill the trench and via structure.

REFERENCES:
patent: 2004/0198066 (2004-10-01), Verhaverbeke

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