Method to reduce Rs pattern dependence effect

Details Method to reduce Rs pattern dependence effect Method to reduce Rs pattern dependence effect

2007-04-24

2007-04-24

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S687000, C257SE23141, C257SE21590

Reexamination Certificate

active

10687183

ABSTRACT:
A method of forming a copper interconnect in an opening within a pattern is described. The copper interconnect has an Rs that is nearly independent of opening width and pattern density. A first copper layer having a concave upper surface and thickness t1is formed in a via or trench in a dielectric layer by depositing copper and performing a first CMP step. A second copper layer with a thickness t2where t2≦t1and having a convex lower surface is deposited on the first copper layer by a selective electroplating method. The first and second copper layers are annealed and then a second CMP step planarizes the second copper layer to become coplanar with the dielectric layer. The invention is also a copper interconnect comprised of the aforementioned copper layers where the first copper layer has a grain density (GD1)≧GD2for the second copper layer.

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