Method to reduce photoresist mask line dimensions

Details Method to reduce photoresist mask line dimensions Method to reduce photoresist mask line dimensions

2005-11-08

2005-11-08

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S725000, C438S735000, C438S909000, C438S948000, C216S049000, C216S058000, C427S350000, C430S313000

Reexamination Certificate

active

06962878

ABSTRACT:
A method for reducing the dimension of a patterned organic photoresist area by reducing the pressure of a reactive environment surrounding the patterned photoresist to cause outgasing. The outgased materials CxHyOzare then decomposed in the reactive environment leaving the outgased photoresist porous. The environment surrounding the patterned photoresist is then increased to atmospheric pressure, which compresses or shrinks the porous photoresist. Photoresist lines having a dimension as small as about 0.085 μm can be obtained.

REFERENCES:
patent: 5472564 (1995-12-01), Nakamura et al.
patent: 6630288 (2003-10-01), Shields et al.
patent: 2004/0079727 (2004-04-01), Taylor et al.
patent: 2004/0161943 (2004-08-01), Ren et al.
Rossnagel et al., Handbook of Plasma Processing, 1990, Noyes Publications, p. 198.

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