Method to reduce collector resistance of a bipolar...

Details Method to reduce collector resistance of a bipolar... Method to reduce collector resistance of a bipolar...

2011-04-12

2011-04-12

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S320000, C257SE21371, C257SE21131

Reexamination Certificate

active

07923340

ABSTRACT:
The invention, in one aspect, provides a method for fabricating a semiconductor device. In one aspect, the method provides for a dual implantation of a tub of a bipolar transistor. The tub in bipolar region is implanted by implanting the tub through separate implant masks that are also used to implant tubs associated with MOS fabricate different voltage devices in a non-bipolar region during the fabrication of MOS transistors.

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PCT Search Report dated Oct. 22, 2007 for PCT/US2007/062100; 4 Pages.

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