Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-02-15
2011-10-11
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C216S088000, C451S038000
Reexamination Certificate
active
08034718
ABSTRACT:
Disclosed are embodiments of a method of removing patterned circuit structures from the surface of a semiconductor wafer. The method embodiments comprise blasting the surface of the semiconductor wafer with particles so as to remove substantially all of the patterned circuit structures. The blasting process is followed by one or more grinding, polishing and/or cleaning processes to remove any remaining circuit structures, to remove any lattice damage and/or to achieve a desired smoothness across the surface of the semiconductor wafer.
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U.S. Appl. No. 11/609,573, Codding, et al., Pending.
U.S. Appl. No. 11/623,354, Codding, et al., Pending.
Codding Steven R.
Domina David
Hardy, Jr. James L.
Krywanczyk Timothy C.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
Vinh Lan
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