Method to protect alignment mark in CMP process

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438460, 438108, 438124, H01L 2146, H01L 21301, H01L 2178

Patent

active

059239964

ABSTRACT:
A method is disclosed for forming alignment marks at the outer perimeter of wafers where they are not susceptible to much damage during chemical-mechanical polishing (CMP) process. Complete protection is provided by recessing the alignment mark into the substrate by etching. Recess etching is accomplished at the same time the isolation trenches are followed to delineate device areas. Thus, alignment marks are provided with a protective recess without extra steps. Furthermore, by forming alignment marks at the outer perimeter of the wafer, productivity is improved by providing maximum usage of wafer area for integrated circuits.

REFERENCES:
patent: 4981529 (1991-01-01), Tsujita
patent: 5198390 (1993-03-01), MacDonald et al.
patent: 5234868 (1993-08-01), Cote
patent: 5314843 (1994-05-01), Yu et al.
patent: 5401691 (1995-03-01), Caldwell
patent: 5523254 (1996-06-01), Satoh et al.
patent: 5556808 (1996-09-01), Williams et al.
patent: 5622899 (1997-04-01), Chao et al.
patent: 5668042 (1997-09-01), Bae
patent: 5700732 (1997-12-01), Jost et al.
patent: 5786260 (1998-07-01), Jang et al.
patent: 5801090 (1998-09-01), Wu et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method to protect alignment mark in CMP process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to protect alignment mark in CMP process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to protect alignment mark in CMP process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2287615

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.