Method to produce thin film resistor using dry etch

Details Method to produce thin film resistor using dry etch Method to produce thin film resistor using dry etch

2007-05-08

2007-05-08

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

Reexamination Certificate

active

10921745

ABSTRACT:
A method of fabricating a thin film resistor (100). The resistor material (104), e.g., NiCr, is deposited. A hard mask material (106), e.g., TiW, may be deposited over the resistor material (104). The resistor material (104) and hard mask material (106) are patterned and sputter etched to form the resistor body. For example, a sputter etch chemistry comprising BCl3, Cl2, and Ar may be used to etch the resistor material.

REFERENCES:
patent: 5679213 (1997-10-01), Noshiro
patent: 6323093 (2001-11-01), Xiang et al.
patent: 6787071 (2004-09-01), Gorczyca et al.
patent: 6855585 (2005-02-01), Kalnitsky et al.
patent: 2001/0046771 (2001-11-01), Steinmann et al.
patent: 2003/0168599 (2003-09-01), Liddiard

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