Method to produce a display screen with a matrix of transistors

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430313, 430317, 430319, 430 20, H01L 2184

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050810049

ABSTRACT:
Method for producing a display screen with a matrix of transistors provided with an optical mask. This method consists of depositing on a substrate (100) a layer of black polyimide (102) absorbing the visible light and followed by a layer of photosensitive resin, of insolating the resin through a mask masking the channels of the transistors to be embodied, of eliminating the zones insolated with the resin and the sub-adjacent zones of the polyimide, of depositing an ITO layer (106) on the unit, of eliminating the rest of the resin and the ITO surmounting said resin so as to form the drains/sources of the transistors, of successively depositing a layer of hydrogenated amorphous silicon (110), a layer of silicon nitride (112) and a layer of aluminium (114), then of photoengraving the stack of these layers so as to form the grid of the transistors, and finally to render passive the unit with a layer of silicon (116).

REFERENCES:
patent: 4389481 (1983-06-01), Poleshuk et al.
patent: 4715930 (1987-12-01), Diem
patent: 4827326 (1989-05-01), Altman et al.
Proceeding of the Society for the Information Display, vol. 27 (Tomihisa)(1986).
IBM Technical Disclosure Bulletin (vol. 29) (1986).
Patent Abstracts (vol. 7, No. 286)(Toshiaki Ogata) (1983).
Patent Abstracts, vol. 11, No. 212 (Kenichi Oota)(2-1987).
Patent Abstracts, vol. 11, No. 355 (Kenichi Oota)(6-1987).
Patent Abstracts, vol. 10, No. 7 (Tooru Sakai)(8-1985).

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