Method to prevent volcane effect in tungsten plug deposition

Details Method to prevent volcane effect in tungsten plug deposition Method to prevent volcane effect in tungsten plug deposition

1997-06-12

1999-02-23

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438648, 438798, H01L 21283

Patent

active

058743553

ABSTRACT:
A method to prevent volcano effect in tungsten plug deposition is described. The method is applied to both the contact plugs as well as the via plugs. For these purposes, the use of a nitrogen (N.sub.2) plasma of a specific recipe is introduced. It is shown that the presence of the nitrogen plasma improves the titanium nitride (TiN) barrier layer through annealing, and nitrogen stuffing of the grain boundaries. In addition, a titanium (Ti) layer must be used prior to the deposition of the TiN layer in order to improve adhesion. This step also enhances the titanium nitride barrier, and reduces the contact resistance (R.sub.c) of the contact-plugs as well. Finally, the nitrogen plasma process and the metal deposition can be done in one and the same equipment.

REFERENCES:
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patent: 5093710 (1992-03-01), Higuchi
patent: 5232871 (1993-08-01), Ho
patent: 5591672 (1997-01-01), Lee et al.
Wolf, S., Silicon Processing, vol. 2, 1992 Lattice Press, pp. 240-252.
"Silicon Processing for the VLSI Era" by S. Wolf, Lattice Press, Sunset Beach, California, 1990, vol. 2 p. 213.

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