Method to prevent static destruction of an active element compri

Details Method to prevent static destruction of an active element compri Method to prevent static destruction of an active element compri

1997-05-30

1999-07-27

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

257 59, 257 72, 345 87, 345 90, 345 92, 349 40, 349 43, H01L 21336, H01L 2978, G02F 113

Patent

active

059306076

DESCRIPTION:

BRIEF SUMMARY
BACKGROUND OF THE INVENTION

1. Field of the Invention
The present invention relates to a method for manufacturing a thin film element, an active matrix substrate, a liquid crystal display device and an active matrix substrate, as well as a method for preventing the electrostatic destruction of an active element included in a liquid crystal display device.
2. Description of Related Art
With the liquid crystal display device having an active matrix format, the switching element in each pixel electrode is connected, and each pixel electrode is switched through the switching element. As the switching element, utilization may be made, for example, of a thin film transistor (TFT).
The construction and operation of the thin film transistor is fundamentally the same as the single crystal silicon MOS transistor.
As the structure of the thin film transistor which utilizes amorphous silicon (.alpha.-Si) there are a number of well known types of construction. However, bottom gate structure (reverse stagger structure) wherein the gate electrode is at the bottom of the amorphous silicon film is generally used.
In the structure of a thin film transistor, it is important to reduce the number of construction processes and to assure a high yield.
In addition, in the production process of an active matrix substrate, it is important to effectively protect the thin film transistor from the destruction caused by the generated static electricity. The technology for protecting the thin film transistor from electrostatic destruction is disclosed, for example, in Japanese laid open utility model 63-33130 which is recorded on microfilm, or in laid open patent publication 62-187885.


SUMMARY OF THE INVENTION

One of the objects of the present invention is to provide a novel thin film element production process technology which enables the reduction of the number of thin film transistor manufacturing processes, with a high degree of reliability.
In addition, another object of the present invention is to provide an active matrix substrate and a liquid crystal display device in which the production process is formed utilizing production process technology which is not complicated, and which has adequate electrostatic prevention capacity for the protection elements. In addition, another object of the present invention is to provide an electrostatic destruction prevention method which can prevent the electrostatic destruction of the active elements (TFT) included in the TFT substrate.
One of the desirable situations for the production method of thin film elements according to the present invention is that, at the time of producing the thin film elements having a bottom gate construction, it includes a process for forming a protective film which covers the source electrode, the drain electrode, and the gate electrode material layer. Subsequently a process for forming a first aperture component having a part of a built up film comprising a gate electrode layer is selectively etched. A gate insulation film which is present on a gate electrode material layer, and a protective film are also formed so that a portion of the surface of the gate electrode layer and the gate electrode material layer is exposed. At the same time, a second aperture component is formed wherein selected etching of a portion of the source electrode layer and the protective film on the drain electrode layer is accomplished, so as to expose a part of the source electrode layer and the surface of the drain electrode layer; and a process which subsequently connects at least one of the gate electrode layer, the gate electrode material layer, the source electrode layer, or the drain electrode layer with the electrically conductive material layer through the first and second aperture.
According to the described thin film element manufacturing method, selective etching of the insulation film is accomplished all at once. Hence, the formation process of an aperture to connect the external connection terminal to the electrode (pad open process), and the formation process of an a

REFERENCES:
patent: 4778258 (1988-10-01), Parks et al.
patent: 5068748 (1991-11-01), Ukai et al.
patent: 5200876 (1993-04-01), Takeda et al.
patent: 5219771 (1993-06-01), Miyake
patent: 5373377 (1994-12-01), Ogawa et al.
patent: 5606340 (1997-02-01), Suzuki et al.
patent: 5671026 (1997-09-01), Shiraki et al.

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