Method to prevent passivation layer peeling in a solder bump...

Details Method to prevent passivation layer peeling in a solder bump... Method to prevent passivation layer peeling in a solder bump...

2005-10-04

2005-10-04

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S663000, C438S907000

Reexamination Certificate

active

06951803

ABSTRACT:
A method for reducing peeling of a cross-linked polymer passivation layer in a solder bump formation process including providing a multi-level semiconductor device formed on a semiconductor process wafer having an uppermost surface comprising a metal bonding pad in electrical communication with underlying device levels; forming a layer of resinous pre-cursor polymeric material over the process surface said resinous polymeric material having a glass transition temperature (Tg) upon curing; subjecting the semiconductor process wafer to a pre-curing thermal treatment temperature below Tg for a period of time; and, subjecting the semiconductor process wafer to at least one subsequent thermal treatment temperature above Tg for a period of time to form an uppermost passivation layer.

REFERENCES:
patent: 4293435 (1981-10-01), Portugall et al.
patent: 6884156 (2005-04-01), Prasad et al.

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