Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-06-27
2006-06-27
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S592000, C257S412000
Reexamination Certificate
active
07067411
ABSTRACT:
A selective spacer to prevent metal oxide formation during polycide reoxidation of a feature such as an electrode and a method for forming the selective spacer are disclosed. A material such as a thin silicon nitride or an amorphous silicon film is selectively deposited on the electrode by limiting deposition time to a period less than an incubation time for the material on silicon dioxide near the electrode. The spacer is deposited only on the electrode and not on surrounding silicon dioxide. The spacer serves as a barrier for the electrode during subsequent oxidation to prevent metal oxide formation while allowing oxidation to take place over the silicon dioxide.
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DeBoer Scott Jeffrey
Schuegraf Klaus Florian
Thakur Randhir P. S.
Lee Calvin
Micro)n Technology, Inc.
Nelms David
Schwegman Lundberg Woessner & Kluth P.A.
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