Method to prevent formation of defects during multilayer interco

Details Method to prevent formation of defects during multilayer interco Method to prevent formation of defects during multilayer interco

1995-09-14

1997-09-09

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438671, 438952, H01L 2128

Patent

active

056656416

ABSTRACT:
A process is provided for forming a hard mask over an aluminum-containing layer for patterning and etching the aluminum-containing layer to define interconnects. The process comprises depositing the material comprising the hard mask at a temperature that is within the range of about 100.degree. C. below the sputtering temperature of the aluminum-containing metal and the sputtering temperature of the aluminum-containing metal.

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