Method to perform selective atomic layer deposition of zinc...

Details Method to perform selective atomic layer deposition of zinc... Method to perform selective atomic layer deposition of zinc...

2007-01-09

2007-01-09

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S689000, C438S770000, C438S785000, C438S625000, C257SE21271

Reexamination Certificate

active

11114862

ABSTRACT:
A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H2O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.

REFERENCES:
Chen et al.,Surface Modification for Area-Selective Atomic Layer Deposition,ALD 2003 Conference.

Affiliated with

Also associated with

Rating

Method to perform selective atomic layer deposition of zinc... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to perform selective atomic layer deposition of zinc..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to perform selective atomic layer deposition of zinc... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3771740