Method to optimize copper chemical-mechanical polishing in a cop

Details Method to optimize copper chemical-mechanical polishing in a cop Method to optimize copper chemical-mechanical polishing in a cop

1999-09-27

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438637, 438643, 438675, H01L 2144

Patent

active

061627283

ABSTRACT:
A method for forming copper interconnect lines using a damascene process. After the formation of the copper seed layer (112) and prior to the formation of the copper layer (120), a pattern (114) is formed to block the formation of the copper in non-interconnect areas. The copper layer (120) is then formed and the pattern (114) is removed. The exposed seed layer (112) and any barrier layers (110) thereunder are removed. Finally, the copper layer (120) is chemically-mechanically polished

REFERENCES:
patent: 5989623 (1999-11-01), Chen et al.
patent: 6008121 (1999-12-01), Yang et al.
patent: 6010962 (1999-12-01), Liu et al.

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