Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-09-13
2005-09-13
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C365S211000
Reexamination Certificate
active
06944057
ABSTRACT:
A method for controlling gate voltage in a memory device is described. The method includes providing a circuit that is adapted to be coupled with the memory device. The circuit is for generating a reference voltage. The method further includes utilizing the reference voltage provided by the circuit to apply a voltage at a gate of the memory device. The voltage has a value corresponding to a temperature of the memory device. The method also includes retaining a proportional relationship between the reference voltage and the temperature of the memory device, regardless of the change in the temperature of the memory device. The reference voltage provides a substantially constant programming time for the memory device regardless of the temperature of the memory device.
REFERENCES:
patent: 6233190 (2001-05-01), Cooper et al.
patent: 6337813 (2002-01-01), Marr
patent: 6400638 (2002-06-01), Yamada et al.
patent: 6781907 (2004-08-01), Marr
Chen Pau-Ling
Hamilton Darlene G.
Kurihara Kazuhiro
Le Binh Quang
Runnion Edward F.
FASL LLC
Luu Pho M.
Nguyen Van Thu
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