Method to monitor process charging effect

Details Method to monitor process charging effect Method to monitor process charging effect

2005-10-25

2005-10-25

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S011000, C438S017000

Reexamination Certificate

active

06958249

ABSTRACT:
A new method is provided for monitoring the effect of electron charging during the creation of a semiconductor device. The method of the invention makes use of electron trapping that occurs as a result of FN tunneling in a layer of interlayer oxide of an EEPROM device. The electron trapping is monitored under conditions of processing. After the electron trapping has occurred, the rate of discharge of the trapped electron charge is measured during Wafer Acceptance Testing (WAT).

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