Semiconductor device manufacturing: process – Gettering of substrate
Patent
1999-01-08
2000-05-23
Bowers, Charles
Semiconductor device manufacturing: process
Gettering of substrate
438905, 438906, H01L 21322
Patent
active
060665467
ABSTRACT:
A method of manufacturing a semiconductor wafer in a chamber having a chuck and in which temperature changes in the chamber cause residual manufacturing materials to fall onto the surface of a production wafer placed on the chuck. When the temperature of the chamber is to be changed, a protection wafer is placed on the surface of the chuck. When the temperature has been changed, the protection wafer is removed from the surface of the chuck and a production wafer is placed on the surface of the chuck and clamped. When the process is complete the production wafer is removed and the protection wafer is placed on the chuck.
REFERENCES:
patent: 5434090 (1995-07-01), Chiou
patent: 5603892 (1997-02-01), Grilletto
patent: 5707498 (1998-01-01), Ngan
patent: 5746928 (1998-05-01), Yen
patent: 5865896 (1999-02-01), Nowak
Sanderfer Anne E.
Shields Jeffrey A.
Advanced Micro Devices , Inc.
Berezny Nema
Bowers Charles
Nelson H. Donald
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