Method to make shallow trench isolation structure by HDP-CVD and

Details Method to make shallow trench isolation structure by HDP-CVD and Method to make shallow trench isolation structure by HDP-CVD and

1999-05-24

2000-04-11

Fahmy, Wael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438428, 438438, H01L 2176

Patent

active

060487755

ABSTRACT:
A method of planarizing a non-conformal HPDCVD STI oxide isolation using an underlying first nitride layer and an overlying second nitride polish stop layer. The HPDCVD oxide is deposited so that the second nitride polish stop is formed coplanar with the first nitride layer over the center of narrow trenches. Both first and second nitride layers act as polish stops. The invention forms a first nitride layer over the substrate. Wide and narrow trenches are then etched in the substrate. In an important step, a non-conformal HDPCVD oxide layer is formed filling the trenches to a level about 500 .ANG. above the substrate surface. Then a second nitride layer is formed over the non-conformal HDPCVD oxide layer. Next, the structure is chemical-mechanical polished using both the first and nitride layers as polish stops. The second nitride layer and narrow extruded parts of the HDP-CVD oxide layer are removed in a DHF etch. Next, the first nitride layer is removed.

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