Method to make markers for double gate SOI processing

Details Method to make markers for double gate SOI processing Method to make markers for double gate SOI processing

2005-03-16

2009-02-10

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S401000, C257SE21561

Reexamination Certificate

active

07488669

ABSTRACT:
A method of making at least one marker (MX) for double gate SOI processing on a SOI wafer is disclosed. The marker has a diffracting structure in a first direction and the diffracting structure is configured to generate an asymmetrical diffraction pattern during use in an alignment and overlay detection system for detection in the first direction.

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Gruber et al. (2001). Precise and simple optical alignment method for double-sided lithography. Applied Optics, vol. 40. No. 28, p. 5052-5055.

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