Method to make a weight compensating/tuning layer on a...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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Details

C438S052000, C438S668000, C257SE21297

Reexamination Certificate

active

10675587

ABSTRACT:
Embodiments of the present invention form a weight-compensating/tuning layer on a structure (e.g., a silicon wafer with one or more layers of material (e.g., films)) having variations in its surface topology. The variations in surface topology take the form of thick and thin regions of materials. The weight-compensating/tuning layer includes narrow and wide regions corresponding to the thick and thin regions, respectively.

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