Method to locate and eliminate manufacturing defects in a...

Plastic and nonmetallic article shaping or treating: processes – Laser ablative shaping or piercing

Reexamination Certificate

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Reexamination Certificate

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07972552

ABSTRACT:
A method for locating and eliminating defects on a substrate wafer includes illuminating a top surface of the substrate wafer with a first illumination source, illuminating a bottom surface of the substrate wafer with a second illumination source, forming an image of a portion of the top surface of the substrate wafer while the substrate wafer is illuminated by the first and second illumination sources, adjusting a contrast of the image to accentuate defects on the top surface of the substrate wafer, locating defects in the image, and ablating the defects on the top surface with a laser.

REFERENCES:
patent: 6175645 (2001-01-01), Elyasaf et al.
patent: 6747243 (2004-06-01), Reinhardt
patent: 2004/0156539 (2004-08-01), Jansson et al.
patent: 2006/0072807 (2006-04-01), Bultman et al.
patent: 2007/0017287 (2007-01-01), Kubena et al.
patent: 2008/0088384 (2008-04-01), Ichikawa
Ihlemann, J., B. Wolff, P. Simon, “Nanosecond and Femtosecond Excimer Laser Ablation of Fused Silica” Applied Physics A. 54, 363-368, 1992.

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