Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1997-05-16
1999-11-23
Mulpuri, Savitri
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438524, H01L 21265
Patent
active
059899867
ABSTRACT:
A method to determine a desired thickness for a surface layer through which ion implantation will take place in order to control the shape of the implantation profile to minimize the formation of flaws includes choosing a maximum angle .theta. between solid phase epitaxial regrowth fronts, determining a projected range of ion implantation distance Rp into the substrate and a projected standard deviation .DELTA.Rp along a first axis direction and a projected standard deviation .DELTA.Y along a second axis direction. These values are then substituted into the following equation to solve for thickness t of the surface layer: t=Rp+cos.theta.[[(.DELTA.Y sin .theta.).sup.2 +(.DELTA.Rp cos .theta.).sup.2 ].sup.0.5 ] After the layer is placed onto the substrate, the implantation step is carried out. Annealing is then performed to recrystallize the amorphous zone. The morphology of the surface being implanted through can also be modified in order to control the directions of recrystallization upon annealing.
REFERENCES:
patent: 4748103 (1988-05-01), Hollinger
patent: 4968634 (1990-11-01), Kuhlmann
patent: 5217924 (1993-06-01), Rodder et al.
patent: 5424222 (1995-06-01), Arndt
patent: 5482876 (1996-01-01), Hsieh et al.
patent: 5498556 (1996-03-01), Hong et al.
patent: 5523244 (1996-06-01), Vu et al.
patent: 5552331 (1996-09-01), Hsu et al.
Tamura, et al., "Lattice Defects Generated by Ion Implantation Into Submicron Si Areas," Mat. Res. Soc. Symp. Proc., vol. 147, 1989, pp. 143-154.
C.H. Chu, et al., "Structural Damage Induced by Ga .sup.+ Focused Ion Beam Implantation in (001) Si," J. Vac. Sci. Technol. B 9 (6), Nov./Dec. 1991, pp. 3451-3455.
M. Tamura, et al., "Mask-Size Dependence of Lattice Defects Generated by B-And As-Implantation Into Submicron Si Areas," Nuclear Instruments and methods in Physics Research B32/38, 1989, pp. 329-335.
H. Cerva, et al., "Defect Formation in Silicon at a mask Edge During Crystallization of an Amorphous Implantation Layer," J. Appl. Phys., vol. 66, No. 10, Nov. 15, 1989, pp. 4723-4728.
M. Horiuchi, et al., "Gate-Edge Effects on SPE Regrowth From As.sup.+ -Implanted Si," Nuclear Instruments and Methods in Physics Research B37/38, 1989, pp. 285-289.
B.Y. Tsui, et al., "Impact of Structure Enhanced Defects Multiplication on Junction Leakage," IEEE/IRPS, 1994, pp. 383-387.
M. Horiuchi, et al., "Three-Dimensional Solid-Phase-Epitaxial Regrowth From As.sup.+ -Implanted Si," J. Appl. Phys. 65 (6), Mar. 15, 1989, pp. 2238-2242.
Y.F. Hsieh, "Generation of Implantation Induced Tertiary Defects," Submitted to JAP, Jul. 1994, pp. 1-20.
Mulpuri Savitri
United Microelectronics Corp.
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