Method to inhibit autodoping in epitaxial layers from heavily do

Details Method to inhibit autodoping in epitaxial layers from heavily do Method to inhibit autodoping in epitaxial layers from heavily do

1985-11-12

1987-04-28

Dixon, Jr., William R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156606, 156613, 156DIG64, C30B 2512, C30B 2300

Patent

active

046611991

ABSTRACT:
Heavily doped substrates of silicon wafers are inhibited from contaminating by autodoping phenomenon lightly doped epitaxial growing films by providing a thick film of silicon on the susceptor for CVD processing in an RF powered reactor. The susceptor film of silicon serves to provide a silicon seal to the rear surface of the substrate to prevent or at least inhibit outdiffusion of dopants that can contaminate the epitaxial film. For example, substrates heavily doped with arsenic, phosphorus or boron at concentrations of 10.sup.19 atoms/cc are inhibited from autodoping contaminating epitaxial films of silicon lightly doped with the same dopant at 10.sup.14 atoms/cc.

REFERENCES:
patent: 4099041 (1978-07-01), Berkman et al.
patent: 4279669 (1981-07-01), Braun et al.
patent: 4579080 (1986-04-01), Martin et al.
Grayson, M., "Encyclopedia of Semiconductor Technology", pp. 381-386, 1984.

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