Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-04-05
2010-06-08
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S763000, C427S535000, C134S001200
Reexamination Certificate
active
07732342
ABSTRACT:
Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.
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Balseanu Mihaela
M'Saad Hichem
Rolfox Isabelita
Shek Mei-Yee
Xia Li-Qun
Applied Materials Inc.
Townsend and Townsend and Crew
Vinh Lan
LandOfFree
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