Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-17
2006-10-17
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257SE27078, C257SE29300, C438S003000, C438S082000, C438S099000
Reexamination Certificate
active
07122853
ABSTRACT:
Systems and methodologies are provided for simplifying a polymer memory cell's operation by employing a post polymer growth treatment to form ionic or super ionic metal compounds therein. Such post polymer growth treatment facilitates distribution and mobility of metal ions (or charged metallic molecules) within an active layer of the polymer memory cell, and mitigates (or eliminates) a need for initialization procedures. Moreover, the post treatment of the present invention can also facilitate controlling a distribution of various thresholds (e.g., write and erase threshold), and set them to predetermined values Accordingly, variability in threshold values of polymer memory cells that can result from initialization processes can be mitigated (or eliminated), and thicker polymer layers can be employed without an initialization penalty.
REFERENCES:
patent: 6982188 (2006-01-01), Xie et al.
patent: 2003/0082444 (2003-05-01), Kuhr et al.
Gaun David
Spitzer Stuart
Yudanov Nicolay F
Amin & Turocy LLP
FASL, Inc.
Nguyen Joseph
Parker Kenneth
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