Method to improve the write speed for memory products

Details Method to improve the write speed for memory products Method to improve the write speed for memory products

2007-12-07

2010-06-15

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Particular write circuit

C365S189090, C365S189110, C365S205000

Reexamination Certificate

active

07738306

ABSTRACT:
A method and circuit are given, to realize a Bit-Line Sense Amplifier with Data-Line Bit Switch (BS) pass transistors for Random Access Memory (RAM) products as Integrated Circuit (IC) fabricated in CMOS technology with optimized operating characteristics of said RAM product with respect to good write stability and high write speed and wherein the layout area of the BS FET-switches and thus also the die size is minimized. This is achieved by using a two thickness technique of oxide layers for crucial internal circuit parts of the chip.

REFERENCES:
patent: 6181193 (2001-01-01), Coughlin, Jr.
patent: 6661253 (2003-12-01), Lee et al.
patent: 6816418 (2004-11-01), Hidaka
patent: 2002/0075741 (2002-06-01), Chrissostomidis et al.
patent: 2008/0130389 (2008-06-01), Kajitani

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