Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-04-12
2005-04-12
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Combined with the removal of material by nonchemical means
C438S760000
Reexamination Certificate
active
06878642
ABSTRACT:
A new method to form passivation openings in the manufacture of an integrated circuit device is achieved. The passivation openings have gradually sloping sidewalls that allow a protective tape to be completely removed without leaving adhesive residue. A semiconductor substrate is provided. A passivation layer is deposited. An organic photoresist layer is deposited overlying the passivation layer. The organic photoresist layer is patterned to expose the passivation layer in areas where passivation openings are planned. The organic photoresist layer is reflowed to create gradually sloping sidewalls on the organic photoresist layer. The passivation layer is etched through to from the passivation openings. The passivation openings are thereby formed with gradually sloping sidewalls. The organic photoresist layer is stripped away. A protective tape is applied overlying the passivation layer and the passivation openings. The protective tape is removed. The gradually sloping sidewalls on the passivation openings allow the protective tape to be completely removed without leaving adhesive residue in the manufacture of the integrated circuit device.
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Chang Chih-Kung
Hsiao Yu-Kung
Hsu Hung-Jen
Lu Kuo-Liang
Pan Sheng-Liang
Fourson George
Kebede Brook
Taiwan Semiconductor Manufacturing Company
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