Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-10-09
2007-10-09
Tran, Binh X. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S729000, C438S733000, C438S776000, C216S071000
Reexamination Certificate
active
10957340
ABSTRACT:
In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma reactor, the source gas comprising: (a) at least one reactive compound; and (b) at least one ignition gas, wherein the at least one ignition gas increases the ignitability of the source gas as compared to the ignitability of the source gas lacking the at least one ignition gas.
REFERENCES:
patent: 5789867 (1998-08-01), Westendorp et al.
patent: 5827437 (1998-10-01), Yang et al.
patent: 5895273 (1999-04-01), Burns et al.
patent: 6087267 (2000-07-01), Dockrey et al.
patent: 6090717 (2000-07-01), Powell et al.
patent: 6228747 (2001-05-01), Joyner
patent: 6291361 (2001-09-01), Hsia et al.
patent: 6475920 (2002-11-01), Coburn et al.
patent: 6537918 (2003-03-01), Ionov et al.
patent: 6635578 (2003-10-01), Xu et al.
patent: 2003/0235987 (2003-12-01), Doshita
patent: 2004/0023508 (2004-02-01), Chinn et al.
patent: 2004/0043612 (2004-03-01), Jung
patent: 2004/0155015 (2004-08-01), Oh
patent: 2004/0209480 (2004-10-01), Su et al.
patent: 2005/0029221 (2005-02-01), Chang et al.
patent: 2005/0032386 (2005-02-01), Chang et al.
patent: 2005/0048790 (2005-03-01), Komagata
Advanced Micro Devices , Inc.
Renner , Otto, Boisselle & Sklar, LLP
Tran Binh X.
LandOfFree
Method to improve ignition in plasma etching or plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to improve ignition in plasma etching or plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to improve ignition in plasma etching or plasma... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3872504