Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-19
2006-09-19
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S754000
Reexamination Certificate
active
07109556
ABSTRACT:
The present invention provides source/drain electrode100for a transistor105. The source/drain electrode100comprises a plurality of polysilicon grains100located over a source/drain region115. A metal salicide layer120conformally coats the plurality of polysilicon grains. The present invention also includes a method of fabricating the above described source/drain electrode200, and integrated circuit800have includes a semiconductor device805having the described source/drain electrodes810.
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Mansoori Majid M.
Wasshuber Christoph
Brady III W. James
Goodwin David
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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