Method to improve drive current by increasing the effective...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S754000

Reexamination Certificate

active

07109556

ABSTRACT:
The present invention provides source/drain electrode100for a transistor105. The source/drain electrode100comprises a plurality of polysilicon grains100located over a source/drain region115. A metal salicide layer120conformally coats the plurality of polysilicon grains. The present invention also includes a method of fabricating the above described source/drain electrode200, and integrated circuit800have includes a semiconductor device805having the described source/drain electrodes810.

REFERENCES:
patent: 3830657 (1974-08-01), Farrar
patent: 5112773 (1992-05-01), Tuttle
patent: 5619057 (1997-04-01), Komatsu
patent: 5719083 (1998-02-01), Komatsu
patent: 5907789 (1999-05-01), Komatsu
patent: 6121081 (2000-09-01), Thakur et al.
patent: 6159785 (2000-12-01), Tsuchimoto et al.
patent: 6312987 (2001-11-01), Han et al.
patent: 6521515 (2003-02-01), Kluth
patent: 6764916 (2004-07-01), Furukawa et al.
patent: 6838127 (2005-01-01), Yun
patent: 6876029 (2005-04-01), Lee et al.
patent: 6930015 (2005-08-01), Ping et al.
Berger “Microstructure Evolution of Nanometer-Sized Hemispherical-Grained SI Deposited by RTCVD”; Department of Materials Engineering, Technion, Haifa 32000, Israel (2001), 3 pages.
Banerjee “Fabrication and Performance of Selective HSG Storage Cells for 256 MB and 1 GB DRAM Applications”; IEEE Transactions on Electron Devices, vol. 47, No. 3, Mar. 2000; 9 pages.
Mansoori “Selective Hemispherical Grained Polysilicon Transformation for 256 MB, 1 GB Dynamic Random Access Memory and Beyond”; reprinted from Journal of the Electrochemical Society, vol. 146, No. 10, Oct. 1999; 7 pages.

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