Method to improve commercial bonded SOI material

Details Method to improve commercial bonded SOI material Method to improve commercial bonded SOI material

1998-02-26

2000-07-11

Smith, Matthew

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438406, 117 85, H01L 2176

Patent

active

06087242&

ABSTRACT:
A method of improving the bonding characteristics of a previously bonded silicon on insulator (SOI) structure is provided. The improvement in the bonding characteristics is achieved in the present invention by, optionally, forming an oxide cap layer on the silicon surface of the bonded SOI structure and then annealing either the uncapped or oxide capped structure in a slightly oxidizing ambient at temperatures greater than 1200.degree. C. Also provided herein is a method for detecting the bonding characteristics of previously bonded SOI structures. According to this aspect of the present invention, a pico-second laser pulse technique is employed to determine the bonding imperfections of previously bonded SOI structures.

REFERENCES:
patent: 4710030 (1987-12-01), Tauc et al.
patent: 5665613 (1997-09-01), Nakashima et al.
patent: 5748317 (1998-05-01), Maris et al.
patent: 5786231 (1998-07-01), Warren et al.
patent: 5959735 (1999-09-01), Maris et al.

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