Method to identify or screen VMIN drift on memory cells...

Details Method to identify or screen VMIN drift on memory cells... Method to identify or screen VMIN drift on memory cells...

2007-06-22

2008-11-11

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S154000, C365S225700

Reexamination Certificate

active

07450452

ABSTRACT:
A method of manufacturing a semiconductor device includes providing an electrical connection to a well of a MOS transistor of a static random access memory (SRAM) cell. A predetermined voltage is applied to the well using the connection to cause a threshold voltage (Vt) of said transistor to change. The change is employed to identify a reliability characteristic of the semiconductor device. An SRAM parameter is altered to modify the reliability characteristic.

REFERENCES:
patent: 5706232 (1998-01-01), McClure et al.

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