Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2011-01-04
2011-01-04
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
C257SE21564, C257SE21573, C257SE21581
Reexamination Certificate
active
07863150
ABSTRACT:
A structure and method to produce an airgap on a substrate having a dielectric layer with a pattern transferred onto the dielectric layer and a self aligned block out mask transferred on the dielectric layer around the pattern.
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Colburn Matthew Earl
Edelstein Daniel C.
Nitta Satya Venkata
Ponth Shom
Purushothaman Sampath
International Business Machines - Corporation
Nugent Theresa O'Rourke
Nugent & Smith LLP
Stark Jarrett J
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