Method to form topography in a deposited layer above a...

Details Method to form topography in a deposited layer above a... Method to form topography in a deposited layer above a...

2007-11-06

2007-11-06

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S633000, C438S637000, C438S687000, C438S704000, C438S740000, C438S745000

Reexamination Certificate

active

11298015

ABSTRACT:
In the present invention a dummy structure is formed in a first deposited layer in order to create topography, generally a raised area, in a deposited layer formed above and later than the first deposited layer. This topography may be advantageous in later steps. In one embodiment, transferred topography allows an alignment or overlay mark obscured by an opaque layer to be located by this enhanced topography. In another embodiment, a raised volume of dielectric material prevents features at the outside of an array area from being overpolished during a CMP step. This method may prove useful in other contexts as well. The size, shape, and placement of the dummy structure is tailored to form the desired excess volume.

REFERENCES:
patent: 5639697 (1997-06-01), Weling et al.
patent: 6486066 (2002-11-01), Cleeves et al.
U.S. Appl. No. 10/883,417, filed Jun. 30, 2004, Raghuram et al.
U.S. Appl. No. 11/097,496, filed Mar. 31, 2005, Chen et al.

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