Method to form self-aligned gate structures around cold cathode

Details Method to form self-aligned gate structures around cold cathode Method to form self-aligned gate structures around cold cathode

1992-02-14

1993-07-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156643, 156644, 445 50, 313309, H01L 21465, H01L 21306

Patent

active

052293319

ABSTRACT:
A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.

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