Method to form self-aligned gate structures around cold cathode

Details Method to form self-aligned gate structures around cold cathode Method to form self-aligned gate structures around cold cathode

1993-04-27

1994-12-13

Fourson, George

Fishing, trapping, and vermin destroying

156643, H01L 21465

Patent

active

053729730

ABSTRACT:
A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.

REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3875442 (1975-04-01), Wasa et al.
patent: 3921022 (1975-11-01), Levine
patent: 3970887 (1976-07-01), Smith et al.
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4666553 (1987-05-01), Blumenfeld et al.
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4746629 (1988-05-01), Hanagasaki
patent: 4857799 (1989-08-01), Spindt et al.
patent: 4943343 (1990-07-01), Bardai et al.
patent: 4964946 (1990-10-01), Gray et al.
patent: 5036015 (1991-07-01), Sandhu et al.
patent: 5055158 (1991-10-01), Gallagher et al.
patent: 5070282 (1991-12-01), Epsztein
patent: 5143820 (1992-09-01), Kotecha et al.
patent: 5186670 (1993-02-01), Doan et al.
patent: 5229331 (1993-07-01), Doan et al.
patent: 5232549 (1993-08-01), Catloy et al.
patent: 5259799 (1993-11-01), Doan et al.
patent: 5266530 (1993-11-01), Bagley et al.
Sharp Corp. Tokyo Res. Labs. M. Urayama, Y. Maruo, Y. Akagi, T. Ise, "Fabrication of Cone-Like field Emitters", 19 a-ZM-6, p. 553, Extended Abstracts (The 53rd Autumn Meeting, 1992); The Japan Society of Applied Physics, No. 2.

Affiliated with

Also associated with

Rating

Method to form self-aligned gate structures around cold cathode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to form self-aligned gate structures around cold cathode , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to form self-aligned gate structures around cold cathode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1193304