Method to form self-aligned floating gate to diffusion...

Details Method to form self-aligned floating gate to diffusion... Method to form self-aligned floating gate to diffusion...

2006-07-18

2006-07-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21388, C257SE21295, C257S316000, C438S295000, C438S400000

Reexamination Certificate

active

07078349

ABSTRACT:
A self-aligned conductive region to active region structure is disclosed in which parallel active regions of a semiconductor region of a substrate, which extends to a surface, are separated by STI regions. The STI regions have an insulator liner layer grown over their sides and are filled with an insulator filler layer. Equally spaced gate insulator regions, formed prior to the STI regions, are disposed over the active regions and overlap a portion of the insulator liner layer. Conductive regions, formed prior to the STI regions, are disposed over the gate insulator regions.

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