Method to form polysilicon resistors shielded from hydrogen intr

Details Method to form polysilicon resistors shielded from hydrogen intr Method to form polysilicon resistors shielded from hydrogen intr

1999-04-01

2000-05-30

Tsai, Jey

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438382, 438783, H01L 21425

Patent

active

060690631

ABSTRACT:
A method to form polysilicon resistors shielded from hydrogen intrusion is described. A semiconductor substrate is provided. Field oxide isolation regions are provided overlying the substrate. A polysilicon layer is deposited overlying the field oxide regions and the substrate. The polysilicon layer is etched away where it is not covered by a mask to form a polysilicon resistor. An interlevel dielectric layer is deposited overlying the polysilicon resistor. Nitrogen ions are implanted into the interlevel dielectric layer. The interlevel dielectric layer is annealed to form a silicon oxynitride shield layer in the interlevel dielectric layer. Contact openings are etched through the interlevel dielectric layer to the polysilicon resistor. The contact openings are filled with a metal layer. The metal layer is patterned. The patterned metal layer is covered with a passivation layer wherein the passivation layer contains hydrogen atoms and wherein the silicon oxynitride shield layer prevents hydrogen atoms from penetrating the polysilicon resistor. The integrated circuit is completed.

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Wolf et al., "Silicon Processing for the VLSI Era ," vol 1: Process Technology, Lattice Press, Sunset Beach, CA, (1986) p. 222.

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