Method to form large grain size polysilicon films by...

Details Method to form large grain size polysilicon films by... Method to form large grain size polysilicon films by...

2008-04-22

2008-04-22

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S486000

Reexamination Certificate

active

07361578

ABSTRACT:
A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorphous film. After deposition of silicon nuclei, crystallization, and specifically HSG, is prevented by lowering temperature and/or raising pressure. Next a second amorphous silicon layer is deposited over the first layer and the nuclei. Finally an anneal is performed to induce crystallization from the embedded nuclei. Thus grains are formed from the silicon bulk, rather than from the surface, HSG is avoided, and a smooth polysilicon film with enhanced grain size is produced.

REFERENCES:
patent: 5343066 (1994-08-01), Okamoto et al.
patent: 5457058 (1995-10-01), Yonehara
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5713279 (1998-02-01), Iida et al.
patent: 5753541 (1998-05-01), Shimizu
patent: 5821152 (1998-10-01), Han et al.
patent: 5893747 (1999-04-01), Yang
patent: 5923968 (1999-07-01), Yamazaki et al.
patent: 5959314 (1999-09-01), Voutsas
patent: 6005270 (1999-12-01), Noguchi
patent: 6031263 (2000-02-01), Forbes et al.
patent: 6121120 (2000-09-01), Wakabayashi et al.
patent: 6146966 (2000-11-01), Hirota et al.
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6191011 (2001-02-01), Gilboa et al.
patent: 6204156 (2001-03-01), Ping
patent: 6249020 (2001-06-01), Forbes et al.
patent: 6249126 (2001-06-01), Lin
patent: 6271134 (2001-08-01), Ha et al.
patent: 6387779 (2002-05-01), Yi et al.
patent: 6391749 (2002-05-01), Park et al.
patent: 6593624 (2003-07-01), Walker
patent: 6992349 (2006-01-01), Lee et al.
patent: 7195992 (2007-03-01), Gu et al.
patent: 2001/0001211 (2001-05-01), Tanaka et al.
patent: 2001/0032997 (2001-10-01), Forbes et al.
patent: 2002/0084535 (2002-07-01), Lee et al.
patent: 03-060026 (1991-03-01), None
Bo, Xiang-Zheng et al., “Spatialy Selective Single-Grain Silicon Films Induced by Hydrogen Plasma Seeding”, J. Vac. Sci, Technol. B 20(3), 2002, pp. 818-921.
Subramanian, Vivek et al., “Controlled Two-Step Solid-Phase Crystallization for High-Performance Polysilicon TFTs”, IEEE Electron Device Letters vol. 18, Issue 8, Aug. 1997, 1997, pp. 378-381.
Yamauchi, N. et al., “Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications”, Journal of Applied Physics, vol. 75, 1994, pp. 3235-3257.

Affiliated with

Also associated with

Rating

Method to form large grain size polysilicon films by... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to form large grain size polysilicon films by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to form large grain size polysilicon films by... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2789339